cq202-4ms cq202-4ns 4.0 amp triac 600 thru 800 volts to-202 thyristor case central semiconductor corp. tm r4 (7-may 2004) description: the central semiconductor cq202-4ms series type is an epoxy molded silicon triac designed for full wave ac control applications featuring gate triggering in all four (4) quadrants. marking code: full part number maximum ratings: (t c =25c unless otherwise noted) symbol cq202 cq202 -4ms -4ns units peak repetitive off-state voltage v drm 600 800 v rms on-state current (t c =80c) i t(rms) 4.0 a peak one cycle surge (t=10ms) i tsm 40 a i 2 t value for fusing (t=10ms) i 2 t 2.4 a 2 s peak gate power (tp=10s) p gm 3.0 w average gate power dissipation p g(av) 0.2 w peak gate current (tp=10s) i gm 1.2 a storage temperature t stg -40 to +150 c junction temperature t j -40 to +125 c thermal resistance ja 60 c/w thermal resistance jc 7.5 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min typ max units i drm rated v drm, r gk =1k ? 10 a i drm rated v drm , r gk =1k ?, t c =125c 200 a i gt v d =12v, quad i, ii, iii 2.5 5.0 ma i gt v d =12v, quad iv 5.4 9.0 ma i h r gk =1k ? 1.6 5.0 ma v gt v d =12v, quad i, ii, iii, iv 0.95 1.75 v v tm i tm =6.0a, tp=380s 1.25 1.75 v dv/dt v d = 2 / 3 v drm, t c =125c 11 v/s
min max min max a 0.057 0.061 1.45 1.55 b 0.019 0.021 0.49 0.52 c 0.175 0.180 4.44 4.56 d 0.376 0.388 9.55 9.85 e 0.118 0.134 3.00 3.40 f (dia) 0.124 0.126 3.15 3.20 g 0.035 0.043 0.90 1.10 h 0.023 0.028 0.59 0.71 j 0.098 0.102 2.49 2.59 k 0.459 0.559 11.66 14.21 l 0.280 0.301 7.12 7.65 m 0.406 0.425 10.30 10.80 n 0.024 0.059 0.60 1.50 to-202 thyristor (rev: r0) dimensions symbol inches millimeters central semiconductor corp. tm to-202 thyristor case - mechanical outline cq202-4ms cq202-4ns 4.0 amp triac 600 thru 800 volts r4 (7-may 2004) lead code: 1) mt1 2) mt2 3) gate note: tab is common to pin 2 (mt2) marking code: full part number
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